High hole mobility p-type GaN with low residual hydrogen concentration prepared by pulsed sputtering

CrNx Films Prepared by DC Magnetron Sputtering and High-Power Pulsed Magnetron Sputtering: A Comparative Study

CrNx (0 ≤ x ≤ 0.91) films synthesized using highpower pulsed magnetron sputtering, also known as high-power impulse magnetron sputtering (HiPIMS), have been compared with those made by conventional direct-current (dc) magnetron sputtering (DCMS) operated at the same average power. The HiPIMS deposition rate relative to the DCMS rate was found to decrease linearly with increasing emission streng...

PREPARATION OF LOW CONCENTRATION HIGH MOBILITY n AND p-PbTe

We report the result of some growth and annealing techniques in the preparation of n and p-PbTe. PbTe has been grown which is intrinsic at room temperature. Maximums mobilities of 4.7 X 106 and 2.8 X 106 cm2/V X sec have been observed in n andp materials, respectively.

High Mobility in N-Type GaN Substrates

High-mobility ZrInO thin-film transistor prepared by an all-DC-sputtering method at room temperature

Thin-film transistors (TFTs) with zirconium-doped indium oxide (ZrInO) semiconductor were successfully fabricated by an all-DC-sputtering method at room temperature. The ZrInO TFT without any intentionally annealing steps exhibited a high saturation mobility of 25.1 cm(2)V(-1)s(-1). The threshold voltage shift was only 0.35 V for the ZrInO TFT under positive gate bias stress for 1 hour. Detaile...

Pulsed DC bias effects on p-type semiconductor SrCu2O2 film deposited by RF magnetron sputtering.

Transparent p-type semiconducting SrCu2O2 films have been deposited by RF magnetron sputtering under unbalanced bipolar pulsed DC bias on low-alkali glass substrates in a mixed gas of 1% H2/Ar below 400 degrees C. The pulsed DC bias voltages to substrate were varied from 0 V to -200 V with a frequency of 350 kHz. The effect of pulsed DC bias on the structure and electrical and optical propertie...